FH - 4th International Conference
Emerging Materials, Technologies and Applications for Non-volatile Memory and Memristive Devices

Gennadi BERSUKER, The Aerospace Corporation, USA
Hideo OHNO, Tohoku University, Japan
Sabina SPIGA, CNR-IMM Agrate Brianza, Italy (Convener)
Rainer WASER, RWTH Aachen University & Forschungszentrum Jülich, Germany
Marco BERNASCONI, University of Milano-Bicocca, Italy
Stefano BRIVIO, CNR-IMM, Italy
Regina DITTMANN, Research Centre Juelich, Germany
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Tuo-Hung HOU, National Chiao Tung University, Taiwan
Antony KENYON, University College London, UK
Alexander V. KOLOBOV, Herzen State Pedagogical University of Russia, Russia
Michael KOZICKI, Arizona State University, USA
Blanka MAGYARI-KÖPE, TSMC Technology Inc., USA
Thomas MIKOLAJICK, Nam-Lab, Germany
Pierre NOE', CEA-LETI, France
Stuart PARKIN, Max Planck Institute of Microstructure Physics, Germany
Kin-Leong PEY, Singapore University of Technology and Design, Singapore
Dafinè RAVELOSONA, Université Paris Sud, France
Yakov ROIZIN, Tower Jazz, Israel
Abu SEBASTIAN, IBM Research, Switzerland
Ilia VALOV, Research Centre Juelich, Germany
Christian WENGER, IHP, Germany
Huaqiang WU, Tsinghua University, China
Qiangfei XIA, University of Massachussets, USA
Eilam YALON, Technion, Israel
Andrei ZENKEVICH, Moscow Institute of Physics and Technology, Russia
Fernando AGUIRRE, Universitat Autonoma de Barcelona, Spain
Lambert ALFF, Technische Universität Darmstadt, Germany
Gennadi BERSUKER, The Aerospace Corporation, USA
Marie-Paule BESLAND, CNRS - IMN, France
Arrigo CALZOLARI, CNR-NANO Istituto Nanoscience, Modena, Italy
Regina DITTMANN, Research Centre Juelich, Germany
Ignasi FINA, ICMAB-CSIC, Spain
Liza HERRERA DIEZ, C2N - CNRS, Université Paris Saclay, France
Siegfried F. KARG, IBM Research - Zurich, Switzerland
Anthony KENYON, University College London, UK
Manuel LE GALLO, IBM Research Europe, Switzerland
Stephan MENZEL, Forschungszentrum Juelich GmbH, Germany
Beatriz NOHEDA, University of Groningen, Netherlands
Amir REGEV, Weebit nano, Israel
Carlo RICCIARDI, Politecnico di Torino, Italy
Alberto RIMINUCCI, CNR - ISMN, Italy
Christian RINALDI, Politecnico di Milano, Italy
Stefan SLESAZECK, Namlab Dresden, Germany
Rainer WASER, RWTH Aachen University & Forschungszentrum Jülich, Germany
Martin ZIEGLER, Technische Universität Ilmenau, Germany
Tobias ZIEGLER, RWTH Aachen University, Germany
Non-volatile memory and memristive devices are currently key elements of several electronic and portable systems, and their market and potential applications are expected to continuously increase in the next years, also towards in-memory and neuromorphic computing. Several advanced concepts (RRAM, CBRAM, PCM, MRAM, Electrochemical memory /ECRAM), STT-MRAM, FRAM, 2D based memristive devices, threshold switching,....), exploiting innovative materials and physical mechanisms, are under investigation to achieve better performance, higher scalability, and to address novel applications for more efficient, intelligent and secure computing systems. Besides pursuing the downscaling of non-volatile memories in terms of minimum size and integration density, the new paradigm is also directed to devices that can integrate multiple functionalities, such as computing and storing information at the same time. This approach will enable the fabrication of novel low power nanoelectronics circuits with potential applications in several fields, including computation schemes emulating the brain functionality, flexible electronics and non-volatile logics.
This symposium will address recent advances on non-volatile memory devices and memristive systems, with focus on innovative storage concepts, new materials and devices, integration schemes and selectors for the storage elements, understanding and modelling of the physical mechanisms for data storage down to the nanoscale, memristive devices and novel applications for von Neumann Computing and beyond.
Session Topics

FH-1.1 Phase Change Memories (PCM): materials, devices and applications

  • Advances in materials and technologies for phase change memories (PCM)
  • Advanced characterization techniques, theory and modelling of PCM
  • New materials and concepts for PCM, including low-dimensional cells, layered and super-lattice phase change materials

FH-1.2 Resistance switching memories and advanced memristive devices

  • Advances in materials and technologies for resistive memories (RRAM)
  • Advanced characterization techniques, theory and modelling of resistive memories
  • Electrochemical memory (ECRAM) and Redox transistors
  • Memristive device systems based on graphene and 2D materials
  • Polymer-based and hybrid organic & inorganic memory devices
  • Nanowire based memristive devices
  • 3D architectures, cross-bar arrays and advanced selectors
  • Optical and photonic memories
  • Radiation-hard memories and space applications

FH-2 Magnetic and ferroelectric memories: materials, devices and applications

  • MRAM and spin transfer torque (STT) MRAM memories, racetrack memory
  • Domain wall, magnetic skyrmions
  • FeRAM and ferroelectric FET
  • Memory based on ferroelectric tunnel junctions
  • Novel materials including organic ferroelectric and magnetic nanostructures for memories
  • Advanced applications of ferroelectric and spintronics devices

FH-3 Emerging applications for non-volatile memories and memristive devices

  • Emerging materials and devices for neuromorphic computing  
  • Metal-Insulator-Transition materials and devices
  • Photonic memories
  • Devices for in-memory computing and reservoir computing
  • Nanowire networks
  • Memristive devices and novel memristive-based circuits
  • Non-volatile logics based on resistive memories and hybrid CMOS/non-volatile memory circuits


Cimtec 2022

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