Symposium CM
Development and Application of Functional Transparent Conducting and Semiconducting Oxides
Convener:
Julia E. MEDVEDEVA, Missouri University of Science and Technology, USA
Members:
M. Daniel BELLET, Grenoble Institute of Technology, France
Claes G. GRANQVIST, Uppsala University, Sweden
Hideo HOSONO, Tokyo Institute of Technology, Japan
Bharat JALAN, University of Minnesota, USA
George KIRIAKIDIS, FORTH – IESL, Greece
Andreas KLEIN, Darmstadt University of Technology, Germany
Sang Yeol LEE, Cheongju University, Korea
Yuzo SHIGESATO, Aoyama Gakuin University, Japan
Chris G. VAN DE WALLE, University of California, Santa Barbara, USA
Tim VEAL, University of Liverpool, UK
Julia E. MEDVEDEVA, Missouri University of Science and Technology, USA
Members:
M. Daniel BELLET, Grenoble Institute of Technology, France
Claes G. GRANQVIST, Uppsala University, Sweden
Hideo HOSONO, Tokyo Institute of Technology, Japan
Bharat JALAN, University of Minnesota, USA
George KIRIAKIDIS, FORTH – IESL, Greece
Andreas KLEIN, Darmstadt University of Technology, Germany
Sang Yeol LEE, Cheongju University, Korea
Yuzo SHIGESATO, Aoyama Gakuin University, Japan
Chris G. VAN DE WALLE, University of California, Santa Barbara, USA
Tim VEAL, University of Liverpool, UK
Martin ALLEN, University of Canterbury, New Zealand
Pedro BARQUINHA, Universidade Nova de Lisboa, Portugal
Jonas DEUERMEIER, Universidade Nova de Lisboa, Portugal
Roberto FORNARI, University of Parma, Italy
Rosario A. GERHARDT, Georgia Institute of Technology, USA
Geoffrey HAUTIER, Dartmouth College, USA
Wei-Cheng LEE, Binghamton University, USA
Michael LORENZ, Leipzig University, Germany
Julia E. MEDVEDEVA, Missouri University of Science & Technology, USA
José MONTERO, Uppsala University, Sweden
Monica MORALES-MASIS, University of Twente, Netherlands
Hartwin PEELAERS, University of Kansas, USA
Aline ROUGIER, Institute of Solid State Chemistry Bordeaux, France
Chris G. VAN DE WALLE, University of California at Santa Barbara, USA
Holger von WENCKSTERN, University of Leipzig, Germany
Pedro BARQUINHA, Universidade Nova de Lisboa, Portugal
Jonas DEUERMEIER, Universidade Nova de Lisboa, Portugal
Roberto FORNARI, University of Parma, Italy
Rosario A. GERHARDT, Georgia Institute of Technology, USA
Geoffrey HAUTIER, Dartmouth College, USA
Wei-Cheng LEE, Binghamton University, USA
Michael LORENZ, Leipzig University, Germany
Julia E. MEDVEDEVA, Missouri University of Science & Technology, USA
José MONTERO, Uppsala University, Sweden
Monica MORALES-MASIS, University of Twente, Netherlands
Hartwin PEELAERS, University of Kansas, USA
Aline ROUGIER, Institute of Solid State Chemistry Bordeaux, France
Chris G. VAN DE WALLE, University of California at Santa Barbara, USA
Holger von WENCKSTERN, University of Leipzig, Germany
Oxide based electronics are seeing a broad set of applications based on new materials and the ability to tailor structure and functionality to enable new functionality. This includes improved TCs including hybrid nanowire TCOs as well as new semiconductors for high speed and wide bandgap electronics, new piezoelectric materials and photovoltaic absorbers. Achieving this requires an increasingly broad materials set but also structural diversity from amorphous to expitaxial and the inclusion of new hybrid materials. Critical in the development of oxide electronics and flexible oxide electronics are not only new materials but also a new level of interfacial control to enhance the control of specific charge transport across interfaces. There is also an increasing potential of the integration of ferroelectric or polar character to the materials and interfaces. Increasingly diverse structures with complex compositions and gradients as well as amorphous and crystalline metal oxide materials as well as wide band-gap nonoxide materials including e.g. nanowire networks and quantum dot structures are extending device designer’s palette of transparent conductors and semiconductors by addressing a variety of cutting edge applications in flexible electronics, new active optoelectronics, even spin photonics. New advanced in materials and processing are also extending the range of the more experienced use of transparent conducting oxides in large area flat-panel displays, thin-film solar cells, antistatic coatings, functional and smart glasses and a number of other applications.
Underlying the development of new functional materials for example organic and nanotube based TCs is the need for a clearer and predictive understanding of basic materials science such as the electronic structure, carrier and trap origin, mobility and scattering, and doping mechanisms which govern conductivity and transparency, coupled with a better insight into interfacial and chemical compatibility issues and the development of models of the performance limits of materials and devices.
Objective of the International Symposium “Development and Application of new Functional Transparent Conducting and Semiconducting Oxides”, which follows the discussions on related subjects held at previous CIMTEC Conferences, is to gather specialists from academia and industry to highlight updated developments in the area from fundamental science to materials synthesis, processing techniques device development and advanced/novel/prospective applications.
Underlying the development of new functional materials for example organic and nanotube based TCs is the need for a clearer and predictive understanding of basic materials science such as the electronic structure, carrier and trap origin, mobility and scattering, and doping mechanisms which govern conductivity and transparency, coupled with a better insight into interfacial and chemical compatibility issues and the development of models of the performance limits of materials and devices.
Objective of the International Symposium “Development and Application of new Functional Transparent Conducting and Semiconducting Oxides”, which follows the discussions on related subjects held at previous CIMTEC Conferences, is to gather specialists from academia and industry to highlight updated developments in the area from fundamental science to materials synthesis, processing techniques device development and advanced/novel/prospective applications.
Session Topics
CM-1 Fundamentals
- Basic theory of functional electronic oxides
- Materials genomics of functional oxides including
- Electronic structure
- Doping mechanisms
- Carriers origin and dynamics
- Optimizing band structure
- Surfaces and interfaces in hybrid structures
- Amorphous vs crystalline materials basic physics and application considerations
- Characterizations of basic TC properties including inoperando
CM-2 Material design and device development
- Advanced crystalline materials
- ZnO based materials
- p-type transparent conductors
- Indium-free TCOs
- Amorphous metal-oxide materials
- Non-oxide transparent conductors
- Nanowire/nanotube arrays and Q-dot based transparent structures
- Other novel materials/concepts
- Device characterisation and properties
- Growth approaches
- PVD/CVD
- Atomic layer deposition
- Spin coating, spray pyrolysis and other chemical techniques
- Direct writing/printing/patterning
- Novel tools and equipment for device fabrication
- Interfaces and chemical compatibility issues
- Modeling and simulation of materials and devices
CM-3 Applications
- Flexible electronics (e.g. roll-up displays, electronic paper)
- Transparent devices (TTFTs) and applications including TC active layers
- Photovoltaics
- Piezoelectrics
- Incorporation of ferroelectric and polar properties
- Magnetic properties in functional oxides
- Wide Bandgap Power Electronics
- OLED/OPV
- Advances in smart /functional applications e.g. photocatalytic/active/protective coatings, smart windows, etc.
- Other advanced/novel/emerging applications
- Building applications
- Multifunctional materials including porous materials