FH - 4th International Conference
Emerging Materials, Technologies and Applications for Non-volatile Memory and Memristive Devices

Gennadi BERSUKER, The Aerospace Corporation, USA
Hideo OHNO, Tohoku University, Japan
Sabina SPIGA, CNR-IMM Agrate Brianza, Italy (Convener)
Rainer WASER, RWTH Aachen University & Forschungszentrum Jülich, Germany
Marco BERNASCONI, University of Milano-Bicocca, Italy
Stefano BRIVIO, CNR-IMM, Italy
Regina DITTMANN, Research Centre Juelich, Germany
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Tuo-Hung HOU, National Chiao Tung University, Taiwan
Antony KENYON, University College London, UK
Alexander V. KOLOBOV, Herzen State Pedagogical University of Russia, Russia
Michael KOZICKI, Arizona State University, USA
Blanka MAGYARI-KÖPE, TSMC Technology Inc., USA
Thomas MIKOLAJICK, Nam-Lab, Germany
Pierre NOE', CEA-LETI, France
Stuart PARKIN, Max Planck Institute of Microstructure Physics, Germany
Kin-Leong PEY, Singapore University of Technology and Design, Singapore
Dafinè RAVELOSONA, Université Paris Sud, France
Yakov ROIZIN, Tower Jazz, Israel
Abu SEBASTIAN, IBM Research, Switzerland
Ilia VALOV, Research Centre Juelich, Germany
Christian WENGER, IHP, Germany
Huaqiang WU, Tsinghua University, China
Qiangfei XIA, University of Massachussets, USA
Eilam YALON, Technion, Israel
Andrei ZENKEVICH, Moscow Institute of Physics and Technology, Russia
Lambert ALFF, Technische Universität Darmstadt, Germany
Marie-Paule BESLAND, CNRS - IMN, France
Regina DITTMANN, Research Centre Juelich, Germany
Ignasi FINA, ICMAB-CSIC, Spain
Shunsuke FUKAMI, Tohoku University, Japan
Yago GONZALEZ-VELO, Arizona State University, USA
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Liza HERRERA DIEZ, C2N - CNRS, Université Paris Saclay, France
Siegfried F. KARG, IBM Research Europe - Zurich, Switzerland
Anthony KENYON, University College London, UK
Alexander V. KOLOBOV, Herzen State Pedagogical University of Russia, Russia
Michael KOZICKI, Arizona State University, USA
Mario LANZA, King Abdullah University of Science and Technology, Saudi Arabia
Matthew MARINELLA, Sandia National Laboratories, USA
Stephan MENZEL, Forschungszentrum Juelich GmbH, Germany
Farshad MORADI, Aarhus University, Denmark
Pierre NOE', CEA-LETI, France
Beatriz NOHEDA, University of Groningen, Netherlands
Kin-Leong PEY, Singapore University of Technology and Design, Singapore
Amir REGEV, Weebit nano, Israel
Carlo RICCIARDI, Politecnico di Torino, Italy
Alberto RIMINUCCI, CNR - ISMN, Italy
Christian RINALDI, Politecnico di Milano, Italy
Abu SEBASTIAN, IBM Zurich, Switzerland
Stefan SLESAZECK, Namlab Dresden, Germany
Dmitri STRUKOV, University of California at Santa Barbara, USA
Rainer WASER, RWTH Aachen University & Forschungszentrum Jülich, Germany
Martin ZIEGLER, Technische Universität Ilmenau, Germany
Tobias ZIEGLER, RWTH Aachen University, Germany
Non-volatile memory and memristive devices are currently key elements of several electronic and portable systems, and their market and potential applications are expected to continuously increase in the next years, also towards in-memory and neuromorphic computing. Several advanced concepts (RRAM, CBRAM, PCM, MRAM, Electrochemical memory /ECRAM), STT-MRAM, FRAM, 2D based memristive devices, threshold switching,....), exploiting innovative materials and physical mechanisms, are under investigation to achieve better performance, higher scalability, and to address novel applications for more efficient, intelligent and secure computing systems. Besides pursuing the downscaling of non-volatile memories in terms of minimum size and integration density, the new paradigm is also directed to devices that can integrate multiple functionalities, such as computing and storing information at the same time. This approach will enable the fabrication of novel low power nanoelectronics circuits with potential applications in several fields, including computation schemes emulating the brain functionality, flexible electronics and non-volatile logics.
This symposium will address recent advances on non-volatile memory devices and memristive systems, with focus on innovative storage concepts, new materials and devices, integration schemes and selectors for the storage elements, understanding and modelling of the physical mechanisms for data storage down to the nanoscale, memristive devices and novel applications for von Neumann Computing and beyond.
Session Topics

FH-1 Resistance switching (RRAM) Phase Change (PCM) Memories and advanced memristive devices

  • Advances in materials and technologies for resistive memories (RRAM and PCM)
  • Advanced characterization techniques, theory and modelling of resistive memories
  • Electrochemical memory (ECRAM) and Redox transistors
  • New materials and concepts for PCM, including low-dimensional cells, layered and super-lattice phase change materials
  • Memristive device systems based on graphene and 2D materials
  • Polymer-based and hybrid organic & inorganic memory devices
  • Nanowire based memristive devices
  • 3D architectures, cross-bar arrays and advanced selectors
  • Optical and photonic memories

FH-2 Magnetic, ferroelectric and multiferroic materials for memory devices

  • MRAM and spin transfer torque (STT) MRAM memories, racetrack memory
  • Domain wall, magnetic skyrmions
  • FeRAM and ferroelectric FET
  • Memory based on ferroelectric tunnel junctions
  • Novel materials including organic ferroelectric and magnetic nanostructures for memories

FH-3 Emerging applications for non-volatile memories and memristive devices

  • Emerging materials and devices for neuromorphic computing  
  • Metal-Insulator-Transition materials and devices
  • Photonic memories
  • Memristive devices and novel memristive-based circuits
  • Non-volatile logics based on resistive memories and hybrid CMOS/non-volatile memory circuits
  • Flexible electronics, radiation-hard memories, space applications


Cimtec 2022

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